FF2000UXTR33T2M1 Infineon - SiC MOSFET Module
FF2000UXTR33T2M1 Description
FF2000UXTR33T2M1 is a 3300 V, 1000 A Infineon XHP 2 SiC MOSFET module (dual), used for traction converters, medium-voltage drives and high-power converters.
USComponent supplies FF2000UXTR33T2M1 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 3,300 V / 1,000 A (IDN) dual (half-bridge) CoolSiC MOSFET module
- Low switching losses, Tvj,op up to 175 °C
- XHP 2 housing, AlSiC base plate and AlN substrate
- High creepage and clearance distances, CTI > 600
Target Applications
Infineon FF2000UXTR33T2M1 is used for Traction converters, medium-voltage drives and high-power converters.
Key Specifications
FF2000UXTR33T2M1 is a 3,300 V, 1,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 3,300 V |
| Drain current (IDN) | 1,000 A |
| Technology | CoolSiC Trench MOSFET (.XT interconnect technology) |
| Package | XHP 2, AlSiC base plate, AlN substrate |
Technical document (PDF) | Request a quote for FF2000UXTR33T2M1 (reply within 24 hours)

