FF2000UXTR33T2M1 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 3300V, 1000A

FF2000UXTR33T2M1 Infineon SiC MOSFET Module

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FF2000UXTR33T2M1 Description

FF2000UXTR33T2M1 is a 3300 V, 1000 A Infineon XHP 2 SiC MOSFET module (dual), used for traction converters, medium-voltage drives and high-power converters.

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Summary of Features

  • 3,300 V / 1,000 A (IDN) dual (half-bridge) CoolSiC MOSFET module
  • Low switching losses, Tvj,op up to 175 °C
  • XHP 2 housing, AlSiC base plate and AlN substrate
  • High creepage and clearance distances, CTI > 600

Target Applications

Infineon FF2000UXTR33T2M1 is used for Traction converters, medium-voltage drives and high-power converters.

Key Specifications

FF2000UXTR33T2M1 is a 3,300 V, 1,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)3,300 V
Drain current (IDN)1,000 A
TechnologyCoolSiC Trench MOSFET (.XT interconnect technology)
PackageXHP 2, AlSiC base plate, AlN substrate

Technical document (PDF)  |  Request a quote for FF2000UXTR33T2M1 (reply within 24 hours)