FF2000UXTR33T2M1 Infineon - SiC MOSFET Module

FF2000UXTR33T2M1 Description

FF2000UXTR33T2M1 is a 3300 V, 1000 A Infineon XHP 2 SiC MOSFET module (dual), used for traction converters, medium-voltage drives and high-power converters.

USComponent supplies FF2000UXTR33T2M1 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

Target Applications

Infineon FF2000UXTR33T2M1 is used for traction drives, high-power converters and high-frequency switching applications.

Key Specifications

FF2000UXTR33T2M1 is a 3,300 V, 1,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.

Parameter	Value
Product type	SiC MOSFET module
Configuration	Dual (half-bridge)
Drain-source voltage (VDSS)	3,300 V
Drain current (IDN)	1,000 A
Technology	CoolSiC Trench MOSFET (.XT interconnect technology)
Package	XHP 2, AlSiC base plate, AlN substrate

Technical document (PDF)  |  Request a quote for FF2000UXTR33T2M1 (reply within 24 hours)