FF1000UXTR23T2M1 Infineon - SiC MOSFET Module
FF1000UXTR23T2M1 Description
FF1000UXTR23T2M1 is a 2300 V, 2000 A Infineon XHP 2 SiC MOSFET module (dual), used for wind and solar converters, traction converters and high-power drives.
USComponent supplies FF1000UXTR23T2M1 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- High current density
- Low inductive design
- Low switching losses
- Substrate for low thermal resistance
- Copper base plate
- High creepage and clearance distances
- High power density
- Package with CTI > 600
Target Applications
Infineon FF1000UXTR23T2M1 is used for central inverter, wind power generation, energy storage systems, industrial drives, traction drives, DC/DC converter, high-power converters and high-frequency switching applications.
Key Specifications
FF1000UXTR23T2M1 is a 2,300 V, 2,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | Dual (half-bridge) |
| Drain-source voltage (VDSS) | 2,300 V |
| Drain current (IDN) | 2,000 A |
| Technology | CoolSiC Trench MOSFET (.XT interconnect technology) |
| Package | XHP 2, copper base plate |
Technical document (PDF) | Request a quote for FF1000UXTR23T2M1 (reply within 24 hours)
Related Part Numbers
| FF2000UXTR33T2M1 3300V, 1000A | FF2600UXTR33T2M1 3300V, 750A | FF4000UXTR33T2M1 3300V, 500A | FF1300UXTR23T2M1P 2300V, 1500A |
| FF1000UXTR23T2M1_B5 2300V, 2000A | FF1000R17IP4 1700V, 1000A | FF1000R17IE4_S4 1700V, 1000A | FF1000R17IE4_S2 1000A/1700V |
| FF1000R17IE4P 1700V, 1000A | FF1000R17IE4D_B2_S4 1700V, 1000A | FF1000R17IE4D_B2 1700V, 1000A | FF1000R17IE4DP_B2 1700V, 1000A |
| FF1000R17IE4 1700V, 1000A | FF1000R12KE7I_S8 1200V, 1000A | FF100R12KE3 1200V, 140A | FF100R12KF2 1200V, 100A |

