FF1000UXTR23T2M1 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 2300V, 2000A

FF1000UXTR23T2M1 Infineon SiC MOSFET Module

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FF1000UXTR23T2M1 Description

FF1000UXTR23T2M1 is a 2300 V, 2000 A Infineon XHP 2 SiC MOSFET module (dual), used for wind and solar converters, traction converters and high-power drives.

USComponent supplies FF1000UXTR23T2M1 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High current density
  • Low inductive design
  • Low switching losses
  • Substrate for low thermal resistance
  • Copper base plate
  • High creepage and clearance distances
  • High power density
  • Package with CTI > 600

Target Applications

Infineon FF1000UXTR23T2M1 is used for central inverter, wind power generation, energy storage systems, industrial drives, traction drives, DC/DC converter, high-power converters and high-frequency switching applications.

Key Specifications

FF1000UXTR23T2M1 is a 2,300 V, 2,000 A Infineon SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)2,300 V
Drain current (IDN)2,000 A
TechnologyCoolSiC Trench MOSFET (.XT interconnect technology)
PackageXHP 2, copper base plate

Technical document (PDF)  |  Request a quote for FF1000UXTR23T2M1 (reply within 24 hours)

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