F4-33MR12W1M1H_B76 Infineon - SiC MOSFET Module

F4-33MR12W1M1H_B76 Description

F4-33MR12W1M1H_B76 is a 1200 V, 25 A Infineon EasyPACK SiC MOSFET module (h-bridge), used for welding, DC charger for EV, DC/DC converter, high-frequency switching.

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Summary of Features

Target Applications

Infineon F4-33MR12W1M1H_B76 is used for welding, DC charger for EV, DC/DC converter and high-frequency switching applications.

Key Specifications

F4-33MR12W1M1H_B76 is a 1,200 V, 25 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.

Parameter	Value
Product type	SiC MOSFET module
Configuration	H-bridge (4-pack)
Drain-source voltage (VDSS)	1,200 V
Drain current (IDN)	25 A
Technology	CoolSiC Trench MOSFET (M1H)
Package	EasyPACK

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