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F4-33MR12W1M1H_B76 Infineon - SiC MOSFET Module
F4-33MR12W1M1H_B76 Description
F4-33MR12W1M1H_B76 is a 1200 V, 25 A Infineon EasyPACK SiC MOSFET module (h-bridge), used for welding, DC charger for EV, DC/DC converter, high-frequency switching.
USComponent supplies F4-33MR12W1M1H_B76 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 1,200 V / 25 A h-bridge SiC MOSFET module
- CoolSiC Trench MOSFET (M1H)
- EasyPACK housing
- Low switching losses for high-frequency operation
- PressFIT contact technology
- Integrated NTC temperature sensor
Target Applications
Infineon F4-33MR12W1M1H_B76 is used for Welding, DC charger for EV, DC/DC converter, high-frequency switching.
Key Specifications
F4-33MR12W1M1H_B76 is a 1,200 V, 25 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | H-bridge (4-pack) |
| Drain-source voltage (VDSS) | 1,200 V |
| Drain current (IDN) | 25 A |
| Technology | CoolSiC Trench MOSFET (M1H) |
| Package | EasyPACK |
Technical document (PDF) | Request a quote for F4-33MR12W1M1H_B76 (reply within 24 hours)
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