F4-200R17N3E4 Infineon - IGBT Module

Category: IGBT Modules

Specifications: 1700V, 200A

F4-200R17N3E4 Infineon IGBT Module

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F4-200R17N3E4 Description

F4-200R17N3E4 is a 1700 V / 200 A four-pack (H-bridge) IGBT module from Infineon Technologies. Typical applications: high power converters, Medium voltage converters.

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Summary of Features

  • Low Vcesat
  • Trench IGBT 4
  • Vcesat with positive temperature coefficient
  • Integrated NTC temperature sensor
  • Isolated base plate
  • Solder contact technology
  • Standard housing

Target Applications

Infineon F4-200R17N3E4 is used for High power converters, Medium voltage converters.

Key Specifications

F4-200R17N3E4 is a 1700 V / 200 A four-pack (H-bridge) IGBT module from Infineon Technologies (EconoPACK 3 package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationFour-pack (H-bridge)
Collector-emitter voltage (VCES)1700 V
Nominal collector current (IC nom)200 A
PackageEconoPACK 3
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F4-200R17N3E4 (reply within 24 hours)

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