F4-3L50R07W2H3F_B11 Infineon - IGBT Module

Also written as: F4-3L50R07W2H3F-B11

Category: IGBT Modules

Specifications: 650V, 50A

F4-3L50R07W2H3F_B11 Infineon IGBT Module

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F4-3L50R07W2H3F_B11 Description

F4-3L50R07W2H3F_B11 is a 650 V / 50 A four-pack (H-bridge) IGBT module from Infineon Technologies. Typical applications: motor drives, Solar applications, UPS systems.

USComponent supplies F4-3L50R07W2H3F_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • CoolSiC Schottky diode gen 5
  • High speed IGBT H3
  • Low switching losses
  • 3 kV AC 1min insulation
  • Al2O3 substrate with low thermal resistance
  • Compact design
  • PressFIT contact technology
  • Rugged mounting due to integrated mounting

Target Applications

Infineon F4-3L50R07W2H3F_B11 is used for Motor drives, Solar applications, UPS systems.

Key Specifications

F4-3L50R07W2H3F_B11 is a 650 V / 50 A four-pack (H-bridge) IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationFour-pack (H-bridge)
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)50 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F4-3L50R07W2H3F_B11 (reply within 24 hours)

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F4-50R06W1E3
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