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F4-3L50R07W2H3F_B11 Infineon - IGBT Module
Also written as: F4-3L50R07W2H3F-B11
F4-3L50R07W2H3F_B11 Description
F4-3L50R07W2H3F_B11 is a 650 V / 50 A four-pack (H-bridge) IGBT module from Infineon Technologies. Typical applications: motor drives, Solar applications, UPS systems.
USComponent supplies F4-3L50R07W2H3F_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- CoolSiC Schottky diode gen 5
- High speed IGBT H3
- Low switching losses
- 3 kV AC 1min insulation
- Al2O3 substrate with low thermal resistance
- Compact design
- PressFIT contact technology
- Rugged mounting due to integrated mounting
Target Applications
Infineon F4-3L50R07W2H3F_B11 is used for Motor drives, Solar applications, UPS systems.
Key Specifications
F4-3L50R07W2H3F_B11 is a 650 V / 50 A four-pack (H-bridge) IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | Four-pack (H-bridge) |
| Collector-emitter voltage (VCES) | 650 V |
| Nominal collector current (IC nom) | 50 A |
| Package | EasyPACK |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for F4-3L50R07W2H3F_B11 (reply within 24 hours)
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