F4-200R17N3E4_B58 Infineon - IGBT Module

Also written as: F4-200R17N3E4-B58

Category: IGBT Modules

Specifications: 1700V, 200A

F4-200R17N3E4_B58 Infineon IGBT Module

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F4-200R17N3E4_B58 Description

F4-200R17N3E4_B58 is a 1700 V / 200 A four-pack (H-bridge) IGBT module from Infineon Technologies. Typical applications: high power converters, Medium voltage converters.

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Summary of Features

  • Low VCEsat
  • Trench IGBT 4
  • VCEsat with positive temperature coefficient
  • Integrated NTC temperature sensor
  • Standard housing

Target Applications

Infineon F4-200R17N3E4_B58 is used for High power converters, Medium voltage converters.

Key Specifications

F4-200R17N3E4_B58 is a 1700 V / 200 A four-pack (H-bridge) IGBT module from Infineon Technologies (EconoPACK 3 package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationFour-pack (H-bridge)
Collector-emitter voltage (VCES)1700 V
Nominal collector current (IC nom)200 A
PackageEconoPACK 3
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F4-200R17N3E4_B58 (reply within 24 hours)

Related Part Numbers

F4-200R06KL4F4-250R17MP4_B11F4-25R12NS4F4-100R06KL4
F4-100R12KS4F4-100R17N3E4F4-100R17N3P4_B58F4-150R06KL4
F4-150R12KS4F4-150R12N3H3F_B11F4-150R17ME4_B11F4-150R17N3P4_B58
F4-17MR12W1M1H_B76F4-300R12KF4F4-30R06W1E3F4-33MR12W1M1H_B76
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