DF160R12W2H3F_B11 Infineon - IGBT
DF160R12W2H3F_B11 Description
The Infineon Technologies DF160R12W2H3F_B11 is an IGBT, rated for 1200 V and 160 A. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.
USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the DF160R12W2H3F_B11; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.
Summary of Features
- High Speed IGBT H3
- Low Switching Losses
- Thin Q H SiC Schottky diode 1200V
- Al2O3 Substrate with Low Thermal Resistance
- Integrated NTC temperature sensor
- Compact design
- PressFIT Contact Technology
Target Applications
Infineon DF160R12W2H3F_B11 is used for Solar Applications.
Key Specifications
DF160R12W2H3F_B11 is a 1,200 V, 160 A diode. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | Diode |
| Repetitive peak reverse voltage (VRRM) | 1,200 V |
| Rated forward / output current | 160 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for DF160R12W2H3F_B11 (reply within 24 hours)
Related Part Numbers
| DF80R12W2H3F_B11 80A/1200V | DF75R12W1H4F_B11 1200V, 75A | DF80R12W2H3_B11 80A/1200V | DF150R12RT4 1200V, 150A |
| DF200R12KE3 1200V, 200A | DF300R12KE3 1200V, 300A | DF1000R17IE4 | DF1000R17IE4D_B2 |
| DF1400R12IP4D | DF17MR12W1M1HF_B68 | DF10-48D05 | DF100AA120 |
| DF100AA160 | DF100BA40 | DF100BA80 | DF100LA120 |

