DF160R12W2H3F_B11 Infineon - IGBT Module

Category: IGBT Modules

Specifications: 1200V, 160A

DF160R12W2H3F_B11 IGBT from Eupec Infineon

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DF160R12W2H3F_B11 Description

The Infineon Technologies DF160R12W2H3F_B11 is an IGBT, rated for 1200 V and 160 A. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the DF160R12W2H3F_B11; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

  • High Speed IGBT H3
  • Low Switching Losses
  • Thin Q H SiC Schottky diode 1200V
  • Al2O3 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF160R12W2H3F_B11 is used for Solar Applications.

Key Specifications

DF160R12W2H3F_B11 is a 1,200 V, 160 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,200 V
Rated forward / output current160 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF160R12W2H3F_B11 (reply within 24 hours)

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