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MG800J1US52A

Specifications:

800 A, 600 V

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MG800J1US52A IGBT Power Transistor Module from Toshiba



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MG800J1US52A Description

TOSHIBA power module

Summerry of Features

MG800J1US52A is a(n) 800 A, 600 V IGBT Power Transistor Module. .

Target Applications

MG800J1US52A High Power Switching / Motor Control Applications

Download MG800J1US52A Datasheet

Download MG800J1US52A Datasheet

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