MG75M2YK1Toshiba - IGBT Power Transistor Module

Specifications: 1000V, 75A

MG75M2YK1, Toshiba, Power Module

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MG75M2YK1 Description

The Toshiba MG75M2YK1 is an IGBT module rated at 1000 V and 75 A, available from USComponent. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75M2YK1.

Target Applications

Toshiba MG75M2YK1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current75 A

Download MG75M2YK1 Datasheet

MG75M2YK1 PDF Datasheet