MG600Q2YS60 Toshiba - IGBT Power Transistor Module

MG600Q2YS60 Description

MG600Q2YS60 is a 1200 V, 600 A IGBT module made by Toshiba. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG600Q2YS60 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Toshiba MG600Q2YS60 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG600Q2YS60 is a 1,200 V, 600 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	600 A
Datasheet	Available on this page (PDF)