MG150J2YS1Toshiba - IGBT Power Transistor Module

MG150J2YS1 Description

Toshiba MG150J2YS1 is an IGBT module rated at 600 V and 150 A. IGBT Power Transistor Modules TOSHIBA GTR Module Silicon N Channel IGBT. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Summary of Features

Target Applications

Toshiba MG150J2YS1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	600 V
Rated current	150 A

MG150J2YS1 Video

Download MG150J2YS1 Datasheet

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