MG150J1JS50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 150A

MG150J1JS50, Toshiba, Power Module

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MG150J1JS50 Description

The MG150J1JS50 from Toshiba is an IGBT module with a 600 V / 150 A rating. It is built with a single switch with its freewheeling diode (1-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

Looking for a replacement MG150J1JS50? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Summary of Features

MG150J1JS50 is a 600 V, 150 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG150J1JS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG150J1JS50 is a 600 V, 150 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)600 V
Collector current (IC)150 A
DatasheetAvailable on this page (PDF)

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