MG150J1ZS50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 150A

MG150J1ZS50, Toshiba, Power Module

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MG150J1ZS50 Description

Toshiba makes the MG150J1ZS50, a 600 V, 150 A IGBT module. The module contains a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG150J1ZS50 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MG150J1ZS50 is a 600 V, 150 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG150J1ZS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG150J1ZS50 is a 600 V, 150 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)600 V
Collector current (IC)150 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG150J1ZS50 (reply within 24 hours)