MG75J1ZS40 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 75A

MG75J1ZS40, Toshiba, Power Module

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MG75J1ZS40 Description

Rated at 600 V and 75 A, the Toshiba MG75J1ZS40 is an IGBT module. Inside, it has a single switch with its freewheeling diode (1-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG75J1ZS40, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG75J1ZS40 is a 600 V, 75 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG75J1ZS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG75J1ZS40 is a 600 V, 75 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)600 V
Collector current (IC)75 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG75J1ZS40 (reply within 24 hours)