MG75J1ZS50Toshiba - GTR module

MG75J1ZS50 Description

Toshiba MG75J1ZS50 is a bipolar power transistor module rated at 600 V and 75 A. Components of this type are commonly used in motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75J1ZS50.

Target Applications

Toshiba MG75J1ZS50 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	IGBT module
Package	Toshiba 2-94D2A
VCES	600 V
IC	75 A (DC)
ICP	150 A (1 ms)
VCE(sat) max.	2.70 V @ 75 A (typ. 2.10 V)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	202 g
Junction temperature	150 °C max.

Download MG75J1ZS50 Datasheet

MG75J1ZS50 PDF Datasheet