GA100TS60SQInternational Rectifier - MOSFET Module

Specifications: 600V, 100A

GA100TS60SQ International Rectifier MOSFET from International Rectifier

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GA100TS60SQ Description

GA100TS60SQ is a silicon carbide (SiC) power module designed for high-power switching applications. It is manufactured by GeneSiC Semiconductor Inc. and consists of two SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and two anti-parallel diodes in a single module. This power module has a maximum collector current of 100A and a maximum collector-emitter voltage of 600V. It features a low on-resistance, fast switching speed, and high thermal conductivity, making it suitable for use in high-frequency, high-temperature, and high-power applications such as electric vehicles, renewable energy systems, and industrial drives. The GA100TS60SQ is designed for high-reliability and efficiency, and it features advanced protection and monitoring features such as over-current protection, over-temperature protection, and under-voltage lockout. Its compact package design simplifies circuit design and assembly and provides high power density and thermal performance.

Target Applications

International Rectifier GA100TS60SQ is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

ManufacturerInternational Rectifier
CategoryMOSFET Module
Rated voltage600 V
Rated current100 A

Download GA100TS60SQ Datasheet

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