IXFN64N50PD2IXYS - Power MOSFET Module

IXFN64N50PD2 Description

IXFN64N50PD2 is a Power Field-Effect Transistor (FET) that is designed for use in high-power switching applications. It is a N-Channel enhancement-mode MOSFET that can handle a maximum drain current of 64A and a maximum drain-source voltage of 500V. The IXFN64N50PD2 features a low on-state resistance, which means that it can conduct large amounts of current with low power dissipation. This results in high efficiency and reduced heat generation. Additionally, the FET has a fast switching speed, which allows for high-frequency operation. The package of IXFN64N50PD2 is a high-performance D2PAK, which offers excellent thermal conductivity and electrical insulation properties. It is also easy to mount and dismount from a PCB (printed circuit board). This FET is commonly used in power supplies, motor drives, and other high-power applications where efficient and reliable switching is required. Its low on-state resistance, fast switching speed, and high voltage capability make it a popular choice among engineers and designers in the power electronics industry.

Target Applications

IXYS IXFN64N50PD2 is used for DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls and Low voltage relays.

Key Specifications

Manufacturer	IXYS
Category	Power MOSFET Module
Rated voltage	500 V
Rated current	52 A

Download IXFN64N50PD2 Datasheet

IXFN64N50PD2 PDF Datasheet