IXFN64N50PD2 IXYS - Power MOSFET Module

Category: MOSFET Modules

Specifications: 500V, 64A

IXFN64N50PD2, IXYS,  Power Transistor Module

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IXFN64N50PD2 Description

Rated at 500 V and 52 A, the IXYS IXFN64N50PD2 is a power MOSFET (HiPerFET). Typical applications are switch-mode power supplies, DC-DC conversion, battery-powered vehicles and high-frequency welding.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the IXFN64N50PD2, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

IXFN64N50PD2 is a 500 V, 64 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN64N50PD2 is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN64N50PD2 is a 500 V, 64 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)500 V
Drain current (ID)64 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for IXFN64N50PD2 (reply within 24 hours)