IXFN64N50P IXYS - MOSFET Module
IXFN64N50P Description
IXFN64N50P is a PolarHV HiPerFET power MOSFET, N-channel, avalanche rated from IXYS, rated 500V, 64A.
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Summary of Features
- International standard packages
- Fast recovery diode
- Unclamped inductive switching (UIS) rated
- Avalanche rated
Target Applications
IXYS IXFN64N50P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.
Key Specifications
IXFN64N50P is a PolarHV HiPerFET power MOSFET, N-channel, avalanche rated from IXYS, rated 500V, 64A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Drain-source voltage VDSS | 500 V |
| Drain current ID25 (TC = 25 °C) | 64 A |
| Pulsed drain current IDM | 150 A |
| On-resistance RDS(on) | ≤ 85 mΩ |
| Reverse recovery trr | ≤ 250 ns |
| Power dissipation PD | 700 W |
| Isolation voltage | 2500 V~ (1 min) |
| Package | miniBLOC, SOT-227 B |
| Datasheet | Available on this page (PDF) |
Note: Datasheet marked preliminary.
Technical document (PDF) | Request a quote for IXFN64N50P (reply within 24 hours)
Related Part Numbers
| IXFN64N60P 600V, 64A | IXFN80N50P 500V, 80A | IXFN100N50P 500V, 100A | IXFN60N80P 800V, 60A |
| IXFN48N60P 600V, 48A | IXFN44N100P 1000V, 44A | IXFN44N80P 800V, 44A | IXFN102N30P 300V, 102A |
| IXFN64N50PD2 500V, 64A | IXFN61N50 500V, 61A | IXFN66N50Q2 500V, 66A | IXFN60N60 600V, 60A |
| IXFN70N60Q2 600V, 70A | IXFN55N50 500V, 55A | IXFN72N55Q2 550V, 72A | IXFN50N80Q2 800V, 50A |

