FZ1600R12KE3Infineon - IGBT

FZ1600R12KE3 Description

FZ1600R12KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems. IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses. The FZ1600R12KE3 IGBT module has a maximum voltage rating of 1200 volts and a current rating of 1600 amps. It consists of two IGBTs in a half-bridge configuration, which allows for bidirectional power flow and efficient switching. The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation. Overall, the FZ1600R12KE3 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers built-in diodes and a half-bridge configuration, making it a versatile and effective solution for a variety of industrial and commercial applications.

Target Applications

Infineon FZ1600R12KE3 is used for High Power Switching, A.C. Motor Controls, D.C. Motor Controls, Uninterruptible Power Supply, Inverter for motor drive.

Key Specifications

Manufacturer	Infineon Technologies (eupec)
Configuration	Single switch - IGBT with free-wheeling diode
Technology	IGBT3
VCES	1200 V
IC	1600 A (TC = 80 °C)
ICRM	3200 A (tp = 1 ms, TC = 80 °C)
Isolation test voltage	2.5 kV RMS, 50 Hz, 1 min
Mounting torque	M5: 4.25 - 5.75 Nm
Terminal torque	M4: 1.7 - 2.3 Nm; M8: 8 - 10 Nm
Weight	1500 g

FZ1600R12KE3 Video

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FZ1600R12KE3 PDF Datasheet