FZ1200R12HE4P Infineon - IGBT Module

FZ1200R12HE4P Description

FZ1200R12HE4P is a 1200 V, 1200 A Infineon single switch IGBT module (IGBT4 (Trench/Fieldstop), Emitter Controlled 4 diode), used for high-power inverters, wind and solar converters, and medium-voltage drives.

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Summary of Features

Target Applications

Infineon FZ1200R12HE4P is used for High-power inverters, wind and solar converters, and medium-voltage drives.

Key Specifications

FZ1200R12HE4P is a 1,200 V, 1,200 A Infineon IGBT module. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT module
Configuration	Single switch (1-in-1)
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC nom)	1,200 A
Technology	IGBT4 (Trench/Fieldstop), Emitter Controlled 4 diode
Package	IHM-B, pre-applied thermal interface material

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