FZ1200R12KF4Infineon - IGBT Module

FZ1200R12KF4 Description

FZ1200R12KF4 is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. This module is designed for use in high-power applications such as motor drives, power supplies, and industrial equipment. Here are some key specifications for the FZ1200R12KF4: Maximum collector-emitter voltage (Vce): 1200 volts Maximum collector current (Ic): 1200 amperes Maximum power dissipation (Pd): 7200 watts Gate-emitter voltage (Vge) range: +/- 20 volts Operating temperature range: -40 to 150 degrees Celsius The FZ1200R12KF4 features a high switching frequency and low on-state voltage drop, making it ideal for high-power applications that require fast switching speeds and low power losses. It incorporates a high-speed IGBT module and a free-wheeling diode, which provides reliable and efficient power switching. This IGBT module is designed with a compact and robust package, which reduces the overall footprint and weight of the system. It also features a built-in overcurrent protection circuit and temperature sensor, ensuring safe and reliable operation. Overall, the FZ1200R12KF4 is a high-performance IGBT module that is well-suited for use in a wide range of high-power applications. Its compact size, high efficiency, and robust design make it an ideal choice for use in modern power systems.

Summary of Features

FZ1200R12KF4 is a 1200V 1200A IGBT Module.

Target Applications

Infineon FZ1200R12KF4 is used for Drives, Wind, Solar and UPS.

Key Specifications

Manufacturer	Infineon Technologies (eupec)
Configuration	Single switch - IGBT with free-wheeling diode
VCES	1200 V
IC	1200 A (DC)
ICRM	2400 A (tp = 1 ms)
VCE(sat) typ.	2.7 V @ 1200 A
Isolation test voltage	2.5 kV RMS, 50 Hz, 1 min
Mounting torque	M6: 5 Nm (±15%)
Terminal torque	M4: 2 Nm; M8: 8 - 10 Nm
Weight	approx. 1500 g
Operating junction temperature	150 °C max.

FZ1200R12KF4 Video

Download FZ1200R12KF4 Datasheet

FZ1200R12KF4 PDF Datasheet