FZ1200R17HE4P Infineon - IGBT Module

Category: IGBT Modules

Specifications: 1700V, 1200A

FZ1200R17HE4P Infineon IGBT Module

Representative image – actual product may differ

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

FZ1200R17HE4P Description

FZ1200R17HE4P is a 1700 V, 1200 A Infineon single switch IGBT module (IGBT4 (Trench/Fieldstop), Emitter Controlled 4 diode), used for wind and solar converters, traction and high-power industrial drives.

USComponent supplies FZ1200R17HE4P and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • 1,700 V / 1,200 A single-switch IGBT module
  • Trench/Fieldstop IGBT4 with Emitter Controlled 4 diode
  • IHM-B housing with pre-applied thermal interface material (TIM)
  • Copper base plate, high power cycling capability

Target Applications

Infineon FZ1200R17HE4P is used for Wind and solar converters, traction and high-power industrial drives.

Key Specifications

FZ1200R17HE4P is a 1,700 V, 1,200 A Infineon IGBT module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT module
ConfigurationSingle switch (1-in-1)
Collector-emitter voltage (VCES)1,700 V
Collector current (IC nom)1,200 A
TechnologyIGBT4 (Trench/Fieldstop), Emitter Controlled 4 diode
PackageIHM-B, pre-applied thermal interface material

Technical document (PDF)  |  Request a quote for FZ1200R17HE4P (reply within 24 hours)