FF200R12KS4P Infineon - IGBT Module
FF200R12KS4P Description
FF200R12KS4P is a 1200 V / 200 A dual (half-bridge) IGBT module from Infineon Technologies.
USComponent supplies FF200R12KS4P and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- High short-circuit capability
- Low switching losses
- Unbeatable robustness
- Vcesat with positive temperature coefficient
- High creepage and clearance distances
- Isolated base plate
- Copper base plate
- Standard housing
Target Applications
Infineon FF200R12KS4P finds applications in various industries and systems where high power switching is required.
Key Specifications
FF200R12KS4P is a 1200 V / 200 A dual (half-bridge) IGBT module from Infineon Technologies (62mm package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | Dual (half-bridge) |
| Collector-emitter voltage (VCES) | 1200 V |
| Nominal collector current (IC nom) | 200 A |
| Package | 62mm |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for FF200R12KS4P (reply within 24 hours)
Related Part Numbers
| FF300R12KS4P 1200V, 300A | FF200R12KS4 1200V, 200A | FF150R12KS4 1200V 150A | FF300R12KS4 1200V, 300A |
| FF100R12KS4 1200V, 150A | FF200R12KT3 1200V, 200A | FF200R12KT3_E 1200V, 200A | FF200R12KE4P 1200V, 200A |
| FF200R12KT4 1200V, 200A | FF200R12KE4 1200V, 200A | FF200R12MT4 1200V, 200A | FF200R12KE3G 1200V, 200A |
| FF200R12W2T7E_B11 1200V, 200A | FF200R12KE3 1200V, 200A | FF200R17KE3 1700V, 200A | FF200R06ME3 200A/600V |

