F3L200R07W2S5F_B11 Infineon - IGBT Module

Also written as: F3L200R07W2S5F-B11

Category: IGBT Modules

Specifications: 650V, 100A

F3L200R07W2S5F_B11 Infineon IGBT Module

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F3L200R07W2S5F_B11 Description

F3L200R07W2S5F_B11 is a 650 V / 100 A 3-level IGBT module from Infineon Technologies.

USComponent supplies F3L200R07W2S5F_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • CoolSiC Schottky diode gen 5
  • Increased blocking voltage capability up to 650V
  • Low switching losses
  • Al2O3 substrate with low thermal resistance
  • Compact design
  • PressFIT contact technology
  • Rugged mounting due to integrated mounting

Target Applications

Infineon F3L200R07W2S5F_B11 finds applications in various industries and systems where high power switching is required.

Key Specifications

F3L200R07W2S5F_B11 is a 650 V / 100 A 3-level IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
Configuration3-level
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)100 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F3L200R07W2S5F_B11 (reply within 24 hours)

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F3L15MR12W2M1_B69
1200V, 15mΩ		F3L150R12W2H3_B11
1200V, 75A		F3L150R07W2H3_B11
650V, 150A		F3L300R07PE4
650V, 300A
F3L150R07W2E3_B11
650V, 150A		F3L300R07PE4BOSA1
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1200V, 11mΩ		F3L300R07PE4P
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