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F3L200R07W2S5F_B11 Infineon - IGBT Module
Also written as: F3L200R07W2S5F-B11
F3L200R07W2S5F_B11 Description
F3L200R07W2S5F_B11 is a 650 V / 100 A 3-level IGBT module from Infineon Technologies.
USComponent supplies F3L200R07W2S5F_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- CoolSiC Schottky diode gen 5
- Increased blocking voltage capability up to 650V
- Low switching losses
- Al2O3 substrate with low thermal resistance
- Compact design
- PressFIT contact technology
- Rugged mounting due to integrated mounting
Target Applications
Infineon F3L200R07W2S5F_B11 finds applications in various industries and systems where high power switching is required.
Key Specifications
F3L200R07W2S5F_B11 is a 650 V / 100 A 3-level IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | 3-level |
| Collector-emitter voltage (VCES) | 650 V |
| Nominal collector current (IC nom) | 100 A |
| Package | EasyPACK |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for F3L200R07W2S5F_B11 (reply within 24 hours)
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