MDN1200C33Hitachi - Diode Module

Specifications: 3300V. 1200A

MDN1200C33, Hitachi, IGBT Power Transistor Module

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MDN1200C33 Description

Hitachi MDN1200C33 is a diode module rated at 3300 V and 1200 A. Typical applications for this type of device include input rectifiers for drives and power supplies, battery chargers, welding equipment and freewheeling circuits.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MDN1200C33.

Target Applications

Hitachi MDN1200C33 is used for AC/DC power conversion and control: controlled and uncontrolled rectifiers, DC motor drives, soft starters, battery chargers, welding equipment, heater and temperature control, and AC power controllers.

Key Specifications

ManufacturerHitachi
CategoryDiode Module
Rated voltage3300 V
Rated current1200 A

Download MDN1200C33 Datasheet

Datasheet not available