MBM250H33E3 Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 3300V, 250A

MBM250H33E3 Hitachi IGBT Module

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MBM250H33E3 Description

MBM250H33E3 is a 3,300 V / 250 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBM250H33E3: 3,300 V / 250 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 3,300 V
  • Catalog current: 250 A
  • Manufacturer status: Mass production
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBM250H33E3 finds applications in various industries and systems where high power switching is required.

Key Specifications

MBM250H33E3 is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBM250H33E3
SeriesMBN / MBM / MBL
Device typeDual IGBT module
Rated VCES3,300 V
Catalog current rating250 A
Manufacturer catalog statusMass production
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

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