MBM200JS12AW Hitachi - Power Transistor Module

MBM200JS12AW Description

Rated at 1200 V and 200 A, the Hitachi MBM200JS12AW is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MBM200JS12AW and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Hitachi MBM200JS12AW is used for nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment.

Key Specifications

Manufacturer	Hitachi
Category	Power Transistor Modules
Rated voltage	1200 V
Rated current	200 A