MBM200JS12AWHitachi - Power Transistor Module

Specifications: 1200(V) / 200(A)

MBM200JS12AW Hitachi IGBT from Hitachi

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MBM200JS12AW Description

The Hitachi MBM200JS12AW is a power semiconductor module rated at 1200 V and 200 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MBM200JS12AW.

Summary of Features

IGBT Module

Target Applications

Hitachi MBM200JS12AW is used for nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment.

Key Specifications

ManufacturerHitachi
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current200 A

Download MBM200JS12AW Datasheet

Datasheet not available