MBM800GS33G2 Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 3300V, 800A

MBM800GS33G2 Hitachi IGBT Module

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MBM800GS33G2 Description

MBM800GS33G2 is a 3,300 V / 800 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer lists this model as a working sample; production availability is not established. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBM800GS33G2: 3,300 V / 800 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 3,300 V
  • Catalog current: 800 A
  • Manufacturer status: Working sample
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBM800GS33G2 finds applications in various industries and systems where high power switching is required.

Key Specifications

MBM800GS33G2 is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBM800GS33G2
SeriesMBN / MBM / MBL
Device typeDual IGBT module
Rated VCES3,300 V
Catalog current rating800 A
Manufacturer catalog statusWorking sample
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

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