MBM800GS33G2 Hitachi - IGBT Module
MBM800GS33G2 Description
MBM800GS33G2 is a 3,300 V / 800 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer lists this model as a working sample; production availability is not established. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.
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Summary of Features
MBM800GS33G2: 3,300 V / 800 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.
- VCES: 3,300 V
- Catalog current: 800 A
- Manufacturer status: Working sample
- Verify exact suffix and datasheet before purchase
Target Applications
Hitachi MBM800GS33G2 finds applications in various industries and systems where high power switching is required.
Key Specifications
MBM800GS33G2 is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.
| Parameter | Value |
|---|---|
| Manufacturer | Hitachi Power Semiconductor Device / MinebeaMitsumi |
| Part number | MBM800GS33G2 |
| Series | MBN / MBM / MBL |
| Device type | Dual IGBT module |
| Rated VCES | 3,300 V |
| Catalog current rating | 800 A |
| Manufacturer catalog status | Working sample |
| Official source | Manufacturer product lineup |
Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.
Technical document (PDF) | Request a quote for MBM800GS33G2 (reply within 24 hours)
Related Part Numbers
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