MBM500E33E2-R Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 3300V, 500A

MBM500E33E2-R Hitachi IGBT Module

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MBM500E33E2-R Description

MBM500E33E2-R is a 3,300 V / 500 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBM500E33E2-R: 3,300 V / 500 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 3,300 V
  • Catalog current: 500 A
  • Manufacturer status: Mass production
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBM500E33E2-R finds applications in various industries and systems where high power switching is required.

Key Specifications

MBM500E33E2-R is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBM500E33E2-R
SeriesMBN / MBM / MBL
Device typeDual IGBT module
Rated VCES3,300 V
Catalog current rating500 A
Manufacturer catalog statusMass production
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

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