MBM200H45E2-H Hitachi - IGBT Module
MBM200H45E2-H Description
MBM200H45E2-H is a 4,500 V / 200 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.
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Summary of Features
MBM200H45E2-H: 4,500 V / 200 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.
- VCES: 4,500 V
- Catalog current: 200 A
- Manufacturer status: Mass production
- Verify exact suffix and datasheet before purchase
Target Applications
Hitachi MBM200H45E2-H finds applications in various industries and systems where high power switching is required.
Key Specifications
MBM200H45E2-H is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.
| Parameter | Value |
|---|---|
| Manufacturer | Hitachi Power Semiconductor Device / MinebeaMitsumi |
| Part number | MBM200H45E2-H |
| Series | MBN / MBM / MBL |
| Device type | Dual IGBT module |
| Rated VCES | 4,500 V |
| Catalog current rating | 200 A |
| Manufacturer catalog status | Mass production |
| Official source | Manufacturer product lineup |
Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.
Technical document (PDF) | Request a quote for MBM200H45E2-H (reply within 24 hours)
Related Part Numbers
| MBM250H33E3 3300V, 250A | MBM500E33E2-R 3300V, 500A | MBM600FS33G2 3300V, 600A | MBM200GR12 1200V, 200A |
| MBM200GS12AW 1200V, 200A | MBM200GS12EBW | MBM200HP6GW | MBM200GS6AW 600V, 200A |
| MBM200HR6G | MBM200GS6A 600V, 200A | MBM200HR6HY | MBM200HS12A 1200V, 200A |
| MBM200HS6A 600V, 200A | MBM200GS12 | MBM200HS6B | MBM200GR6 |

