MBM200H45E2-H Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 4500V, 200A

MBM200H45E2-H Hitachi IGBT Module

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MBM200H45E2-H Description

MBM200H45E2-H is a 4,500 V / 200 A dual igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBM200H45E2-H: 4,500 V / 200 A dual igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 4,500 V
  • Catalog current: 200 A
  • Manufacturer status: Mass production
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBM200H45E2-H finds applications in various industries and systems where high power switching is required.

Key Specifications

MBM200H45E2-H is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBM200H45E2-H
SeriesMBN / MBM / MBL
Device typeDual IGBT module
Rated VCES4,500 V
Catalog current rating200 A
Manufacturer catalog statusMass production
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

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