5SNA1600N170100 ABB - IGBT Module

Also written as: 5SNA160017N0120, 5SNA 1600N170100

Category: IGBT Modules

Specifications: 1700V, 1600A

5SNA1600N170100 ABB IGBT Module

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5SNA1600N170100 Description

5SNA1600N170100 is a 1700 V / 1600 A HiPak IGBT module (single switch) from ABB (Hitachi Energy). Typical applications: traction converters, industrial medium-power drives, wind and solar converters and other high-power inverters.

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Summary of Features

  • Low-loss, rugged SPT chip-set
  • Smooth switching SPT chip-set for good EMC
  • Industry standard HiPak package
  • High power density
  • AlSiC base plate for high power cycling capability
  • AlN substrate for low thermal resistance

Target Applications

ABB 5SNA1600N170100 is used for Traction converters, industrial medium-power drives, wind and solar converters and other high-power inverters.

Key Specifications

5SNA1600N170100 is a 1700 V / 1600 A HiPak IGBT module (single switch) from ABB, now Hitachi Energy. Source: manufacturer datasheet.

ParameterValue
ManufacturerABB (Hitachi Energy)
ConfigurationSingle switch (1 IGBT + anti-parallel diode)
PackageHiPak, 130 x 140 x 38 mm
Collector-emitter voltage (VCES)1700 V
DC collector current (IC)1600 A at Tc = 80 °C
Peak collector current (ICM)3200 A (tp = 1 ms)
Gate-emitter voltage (VGES)±20 V
Total power dissipation (Ptot)9100 W at Tc = 25 °C per IGBT
VCE(sat)2.3 V typ. / 2.6 V max. at IC = 1600 A, VGE = 15 V, Tvj = 25 °C
Switching energy (Tvj = 125 °C)Eon 530 mJ, Eoff 590 mJ at 900 V / 1600 A
Diode forward current (IF)1600 A DC; IFRM 3200 A; IFSM 13200 A
Short-circuit withstand (tpsc)10 µs
Thermal resistance Rth(j-c)0.011 K/W IGBT, 0.018 K/W diode
Isolation voltage (Visol)4000 V, 1 min
Junction temperatureTvj 150 °C max.; operating -40 to +125 °C
Module stray inductance15 nH
Mass920 g
DatasheetAvailable on this page (PDF, ABB doc. 5SYA1564-01)

Technical document (PDF)  |  Request a quote for 5SNA1600N170100 (reply within 24 hours)

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