QM200E2Y-HBMitsubishi - Power Transistor Module

Specifications: 1200V, 200A

QM200E2Y-HB, Mitsubishi, Power Transistor Module

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QM200E2Y-HB Description

The Mitsubishi Electric QM200E2Y-HB is a Darlington transistor module rated at 1200 V and 200 A, available from USComponent. This type of device is widely used in motor drives, UPS systems and power supplies; transistor modules of this type are largely superseded by IGBTs in new designs but remain essential for maintaining installed equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the QM200E2Y-HB.

Target Applications

Mitsubishi QM200E2Y-HB is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerMitsubishi Electric
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current200 A

QM200E2Y-HB Video

QM200E2Y-HB video

Download QM200E2Y-HB Datasheet

Datasheet not available