QM150E2Y-HBMitsubishi - Power Transistor Module

Specifications: 1200(V) / 150(A)

QM150E2Y-HB Power Transistor Module from Mitsubishi

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QM150E2Y-HB Description

The Mitsubishi Electric QM150E2Y-HB is a Darlington transistor module rated at 1200 V and 150 A. Components of this type are commonly used in motor drives, UPS systems and power supplies; transistor modules of this type are largely superseded by IGBTs in new designs but remain essential for maintaining installed equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the QM150E2Y-HB.

Summary of Features

Power Transistor Module

Target Applications

Mitsubishi QM150E2Y-HB is used for Inverters, Servo Drives, UPS, DC Motor Controllers, NC Equipment and Welders.

Key Specifications

ManufacturerMitsubishi Electric
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current150 A

Download QM150E2Y-HB Datasheet

Datasheet not available