IXFN32N80PIxys - Power MOSFET Module

Specifications: 800V, 29A

IXFN32N80P, IXYS, Power Transistor Module

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IXFN32N80P Description

The IXYS IXFN32N80P is a MOSFET module rated at 800 V and 29 A. Components of this type are commonly used in high-frequency switching such as switch-mode power supplies, DC-DC converters, battery-powered drives and welding equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the IXFN32N80P.

Summary of Features

IXFN32N80P is an 800 V, 32 A power MOSFET (HiPerFET).

Target Applications

Ixys IXFN32N80P is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN32N80P is an 800 V, 32 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)800 V
Drain current (ID)32 A
DatasheetAvailable on this page (PDF)

Download IXFN32N80P Datasheet

IXFN32N80P PDF Datasheet