MG75J6ES50 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 600V, 75A

MG75J6ES50, Toshiba, Power Module

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MG75J6ES50 Description

Toshiba MG75J6ES50 is an IGBT / power transistor module rated at 600 V and 75 A. The module contains six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG75J6ES50, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG75J6ES50 is a 600 V, 75 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG75J6ES50 is used for High Power Switching.

Key Specifications

MG75J6ES50 is a 600 V, 75 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)600 V
Collector current (IC)75 A
Isolation voltage2,500 V
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG75J6ES50 (reply within 24 hours)

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