MG75J6ES50 Toshiba - Power Transistor Module

Category: IGBT Modules

Specifications: 600V, 75A

MG75J6ES50, Toshiba, Power Module

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MG75J6ES50 Description

Toshiba MG75J6ES50 is an IGBT / power transistor module rated at 600 V and 75 A. The module contains six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG75J6ES50, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG75J6ES50 is a 600 V, 75 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG75J6ES50 is used for High Power Switching.

Key Specifications

MG75J6ES50 is a 600 V, 75 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)600 V
Collector current (IC)75 A
Isolation voltage2,500 V
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG75J6ES50 (reply within 24 hours)

Related Part Numbers

MG75J6ES51
1000V, 75A		MG75J6ES53
600V, 75A		MG75J6ES45
600V, 75A		MG75J6ES40
600V, 75A
MG100J6ES50
600V, 100A		MG50J6ES50
600V, 50A		MG30J6ES50
600V, 30A		MG25J6ES50
MG75J6EL1MG75J6ES1MG75J6ES11MG75J1BS11
MG75J1ZS40MG75J1ZS50MG75J2YS1MG75J2YS40
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