MG75J1BS11 Toshiba - Power Transistor Module

MG75J1BS11 Description

The Toshiba MG75J1BS11 is an IGBT / power transistor module, rated for 600 V and 75 A. The module contains a single switch with its freewheeling diode (1-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG75J1BS11, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Target Applications

Toshiba MG75J1BS11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG75J1BS11 is a 600 V, 75 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	600 V
Collector current (IC)	75 A
Datasheet	Available on this page (PDF)

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