MG60M1AL1 Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 900V, 60A

MG60M1AL1, Toshiba, Power Module

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MG60M1AL1 Description

The Toshiba MG60M1AL1 is an IGBT / power transistor module, rated for 1000 V and 60 A. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG60M1AL1, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

MG60M1AL1 is a 60 A IGBT / power transistor module.

Target Applications

Toshiba MG60M1AL1 is used for High Power Switching Applications and Induction Heating Applications.

Key Specifications

MG60M1AL1 is a 60 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)60 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG60M1AL1 (reply within 24 hours)

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