MG60M1AL1 Toshiba - Power Transistor Module
MG60M1AL1 Description
The Toshiba MG60M1AL1 is an IGBT / power transistor module, rated for 1000 V and 60 A. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.
USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG60M1AL1, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.
Summary of Features
MG60M1AL1 is a 60 A IGBT / power transistor module.
Target Applications
Toshiba MG60M1AL1 is used for High Power Switching Applications and Induction Heating Applications.
Key Specifications
MG60M1AL1 is a 60 A IGBT / power transistor module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Collector current (IC) | 60 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG60M1AL1 (reply within 24 hours)
Related Part Numbers
| MG50M1BK1 50A/1000V | MG50G1JL1 450V, 50A | MG50H1BS1 500V, 50A | MG50H1ZS1 500V, 50A |
| MG50N1BS1 1200V, 50A | MG50Q1BS1 1200V, 50A | MG600J1US51 | MG600J2YS59A |
| MG600J2YS60A | MG600J2YS61A | MG600Q1US41 | MG600Q1US51 |
| MG600Q1US59A | MG600Q1US65H | MG600Q2YS59A | MG600Q2YS60 |

