MG50J2YS9 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 600V, 50A

MG50J2YS9, Toshiba, Power Module

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MG50J2YS9 Description

The Toshiba MG50J2YS9 is an IGBT / power transistor module, rated for 600 V and 50 A. It is built with two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Request a quote for the MG50J2YS9 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

MG50J2YS9 is a 600 V, 50 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG50J2YS9 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50J2YS9 is a 600 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)600 V
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50J2YS9 (reply within 24 hours)

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