MG50J2YS9 Toshiba - Power Transistor Module

MG50J2YS9 Description

The Toshiba MG50J2YS9 is an IGBT / power transistor module, rated for 600 V and 50 A. It is built with two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Request a quote for the MG50J2YS9 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

Target Applications

Toshiba MG50J2YS9 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50J2YS9 is a 600 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	600 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50J2YS9 (reply within 24 hours)