MG400Q1US41EPToshiba - IGBT Power Transistor Module

MG400Q1US41EP Description

MG400Q1US41EP is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. It is designed for use in high-frequency switching applications, such as motor control and power conversion in industrial equipment and transportation systems. This IGBT module has a maximum collector current rating of 400A and a maximum collector-emitter voltage rating of 1,700V. It also features a low on-state voltage drop, allowing for efficient power conversion and minimizing power dissipation. The MG400Q1US41EP module consists of four IGBTs in a single package, along with freewheeling diodes to enable bi-directional current flow. It also includes built-in temperature and over-current protection circuits to ensure safe and reliable operation. Overall, the MG400Q1US41EP is a high-performance IGBT module that can provide efficient and reliable power switching for a wide range of industrial and transportation applications.

Target Applications

Toshiba MG400Q1US41EP is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	400 A

Download MG400Q1US41EP Datasheet

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