MG400Q1US65HToshiba - IGBT Power Transistor Module

MG400Q1US65H Description

The Toshiba MG400Q1US65H is an IGBT module rated at 1200 V and 400 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG400Q1US65H.

Target Applications

Toshiba MG400Q1US65H is used for high power switching and motor control applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT module (GTR module), electrodes isolated from case
Package	Toshiba 2-109F1A
VCES	1200 V
IC	400 A (DC)
ICP	800 A (1 ms)
VCE(sat) typ. / max.	3.0 / 4.0 V @ 400 A (TC = 25 °C)
Weight	465 g
Junction temperature	150 °C max.

MG400Q1US65H Video

Download MG400Q1US65H Datasheet

MG400Q1US65H PDF Datasheet