MG400Q1US65H Toshiba - IGBT Power Transistor Module

MG400Q1US65H Description

Toshiba makes the MG400Q1US65H, a 1200 V, 400 A IGBT module. The module contains a single switch with its freewheeling diode (1-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

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Target Applications

Toshiba MG400Q1US65H is used for high power switching and motor control applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT module (GTR module), electrodes isolated from case
Package	Toshiba 2-109F1A
VCES	1200 V
IC	400 A (DC)
ICP	800 A (1 ms)
VCE(sat) typ. / max.	3.0 / 4.0 V @ 400 A (TC = 25 °C)
Weight	465 g
Junction temperature	150 °C max.

MG400Q1US65H Video

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