MG400Q1US41EP Toshiba - IGBT Power Transistor Module

MG400Q1US41EP Description

MG400Q1US41EP is a 1200 V / 400 A single IGBT module from Toshiba. Typical applications: high power switching and motor control.

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Summary of Features

Target Applications

Toshiba MG400Q1US41EP is used for High power switching and motor control.

Key Specifications

MG400Q1US41EP is a 1200 V / 400 A single IGBT module from Toshiba. Source: manufacturer datasheet.

Parameter	Value
Manufacturer	Toshiba
Configuration	Single IGBT with free-wheeling diode
Collector-emitter voltage (VCES)	1200 V
Gate-emitter voltage (VGES)	±20 V
Collector current (IC)	400 A DC, 800 A 1 ms
Collector power dissipation (PC)	2400 W
VCE(sat)	3.0 V typ. / 4.0 V max. at 400 A
Switching times (typ. / max.)	tr 0.3/0.6 µs, ton 0.4/0.8 µs, tf 0.2/0.5 µs, toff 0.8/1.5 µs
Diode forward voltage (VF)	2.0 V typ. / 3.0 V max. at 400 A
Reverse recovery time (trr)	0.25 µs typ. / 0.5 µs max.
Thermal resistance Rth(j-c)	0.052 °C/W IGBT, 0.2 °C/W diode
Isolation voltage	2500 V AC, 1 min
Weight	465 g
Datasheet	Available on this page (PDF)

Note: data taken from the Toshiba datasheet of MG400Q1US41. MG400Q1US41EP is the same part with a suffix that does not change the electrical ratings.

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