MG30M1BN1 Toshiba - IGBT Power Transistor Module
MG30M1BN1 Description
Rated at 1000 V and 30 A, the Toshiba MG30M1BN1 is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.
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Target Applications
Toshiba MG30M1BN1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.
Key Specifications
| Manufacturer | Toshiba |
| Category | IGBT Power Transistor Module |
| Rated voltage | 1000 V |
| Rated current | 30 A |
Related Part Numbers
| MG30G1BL1 450V, 30A | MG30H1BL1 500V, 30A | MG30G1JL1 450V, 50A | MG25N1BS1 1000V, 25A |
| MG25H1BS1 600V, 25A | MG25M1BK1 800V, 25A | MG30V1BS41 1200V, 30A | MG30J6ES50 600V, 30A |
| MG30V2YS40 1700V,30A | MG30J6ES40 600V, 30A | MG30J6ES11 600V, 30A | MG30H6EL2 30 Amp, 500 Volt |
| MG30H6EL1 1200V, 400A | MG30H2CL3 1200(V) / 300(A) | MG30H2CL2 500V, 30A | MG30H2CL1 500V, 30A |

