MG30M1BN1Toshiba - IGBT Power Transistor Module

MG30M1BN1 Description

The Toshiba MG30M1BN1 is an IGBT module rated at 1000 V and 30 A, available from USComponent. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG30M1BN1.

Target Applications

Toshiba MG30M1BN1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1000 V
Rated current	30 A

Download MG30M1BN1 Datasheet

Datasheet not available