MG30M1BN1 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1000V, 30A

MG30M1BN1, Toshiba, Power Module

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MG30M1BN1 Description

Rated at 1000 V and 30 A, the Toshiba MG30M1BN1 is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Target Applications

Toshiba MG30M1BN1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current30 A