MG30H2CL3Toshiba - Power Transistor Module

Specifications: 1200(V) / 300(A)

MG30H2CL3 IGBT Power Transistor Module from Toshiba

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MG30H2CL3 Description

Toshiba MG30H2CL3 is a power semiconductor module rated at 1200 V and 300 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG30H2CL3.

Summary of Features

IGBT Module

Target Applications

Toshiba MG30H2CL3 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current300 A

Download MG30H2CL3 Datasheet

Datasheet not available