MG30J6ES11 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 600V, 30A

MG30J6ES11, Toshiba, Power Module

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MG30J6ES11 Description

Toshiba MG30J6ES11 is an IGBT module rated at 600 V and 30 A. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG30J6ES11, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG30J6ES11 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage600 V
Rated current30 A

Related Part Numbers

MG50J6ES11
600V, 50A		MG75J6ES11
600V, 75A		MG100J6ES11
600V, 100A		MG30J6ES40
600V, 30A
MG30J6ES50
600V, 30A		MG25J6ES40
600V, 25A		MG25J6ES1
600V, 25A		MG25J6ES42
600V, 25A
MG30H6EL2
30 Amp, 500 Volt		MG30H6EL1
1200V, 400A		MG30M1BN1
1000V, 30A		MG30H2CL3
1200(V) / 300(A)
MG30V1BS41
1200V, 30A		MG30H2CL2
500V, 30A		MG30V2YS40
1700V,30A		MG30H2CL1
500V, 30A
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