MG200H1FL1Toshiba - IGBT Power Transistor Module

Specifications: 550V, 200A

MG200H1FL1, Toshiba, Power Module

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MG200H1FL1 Description

Toshiba MG200H1FL1 is an IGBT module rated at 550 V and 200 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG200H1FL1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage550 V
Rated current200 A

Download MG200H1FL1 Datasheet

MG200H1FL1 PDF Datasheet