MG300H1FL1 Toshiba - Bipolar Transistor Module

Category: IGBT Modules

Specifications: 600V, 300A

MG300H1FL1, Toshiba, Power Module

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MG300H1FL1 Description

The Toshiba MG300H1FL1 is an IGBT / power transistor module, rated for 600 V and 300 A. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG300H1FL1, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG300H1FL1 is a 300 A IGBT / power transistor module.

Target Applications

Toshiba MG300H1FL1 is used for High Power Switching Applications and Induction Heating Applications.

Key Specifications

MG300H1FL1 is a 300 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)300 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG300H1FL1 (reply within 24 hours)

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600V, 300A
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