MG200H2CK1Toshiba - IGBT Power Transistor Module

MG200H2CK1 Description

Toshiba MG200H2CK1 is an IGBT module rated at 550 V and 200 A. POWER TRANSISTOR MODULE Darlington Half Bridge Power Module - 3-Stage Darlington. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200H2CK1.

Summary of Features

Target Applications

Toshiba MG200H2CK1 is used for POWER TRANSISTOR.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	550 V
Rated current	200 A

Download MG200H2CK1 Datasheet

MG200H2CK1 PDF Datasheet