MG200H2CK1 Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 200A

MG200H2CK1 IGBT Power Transistor Module from Toshiba

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MG200H2CK1 Description

Toshiba makes the MG200H2CK1, a 550 V, 200 A IGBT module. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

Need the MG200H2CK1? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

MG200H2CK1 is a 200 A IGBT / power transistor module.

Target Applications

Toshiba MG200H2CK1 is used for POWER TRANSISTOR.

Key Specifications

MG200H2CK1 is a 200 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)200 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG200H2CK1 (reply within 24 hours)

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