SKM300GB12T4SEMIKRON - IGBT Module

SKM300GB12T4 Description

SKM300GB12T4 is a 1200 V, 300 A Semikron half-bridge IGBT module with 4th generation Trench IGBT and CAL4 diodes, used in AC inverter drives, UPS, renewable energy systems and industrial power converters.

USComponent supplies SKM300GB12T4 and other Semikron power modules. Download the datasheet or request a quote for pricing and availability.

Target Applications

SEMIKRON SKM300GB12T4 finds applications in various industries and systems where high power switching is required.

Key Specifications

Manufacturer	Semikron
Configuration	Half-bridge (GB) IGBT module with free-wheeling diodes
Package	SEMITRANS 3
Technology	Trench IGBT4, CAL4 soft switching diode
VCES	1200 V
IC	300 A nom.; 420 A (TC = 25 °C) / 325 A (TC = 80 °C)
ICRM	900 A (3 x ICnom)
VCE(sat) typ. / max. (chip level, 25 °C)	1.85 / 2.05 V @ 300 A
Diode IFSM	1720 A (10 ms, 175 °C)
Terminal current It(RMS)	500 A
Isolation voltage	4000 V (AC, 50 Hz, 1 min)
Junction temperature	-40 to +175 °C

Download SKM300GB12T4 Datasheet

SKM300GB12T4 PDF Datasheet