SEMiX603GB12E4pSEMIKRON - IGBT Module

SEMiX603GB12E4p Description

SEMiX603GB12E4p is a 1200 V, 600 A Semikron half-bridge IGBT module with 4th generation Trench IGBT and CAL4 diodes, used in AC inverter drives, UPS, renewable energy systems and industrial power converters.

USComponent supplies SEMiX603GB12E4p and other Semikron power modules. Download the datasheet or request a quote for pricing and availability.

Target Applications

SEMIKRON SEMiX603GB12E4p is used for AC inverter drives, UPS, and renewable energy systems.

Key Specifications

Manufacturer	Semikron
Configuration	Half-bridge (GB) IGBT module with free-wheeling diodes
Package	SEMiX 3p (PressFIT)
Technology	Trench IGBT4
VCES	1200 V
IC	600 A nom.; 1062 A (TC = 25 °C) / 815 A (TC = 80 °C)
ICRM	1800 A
VCE(sat) typ. / max. (chip level, 25 °C)	1.80 / 2.05 V @ 600 A
Note	Isolation between temperature sensor and power section: 2500 V
Isolation voltage	4000 V (AC, 50 Hz, 1 min)
Mounting torque	M5: 3 - 6 Nm
Terminal torque	M6: 3 - 6 Nm
Weight	350 g
Junction temperature	-40 to +175 °C

Download SEMiX603GB12E4p Datasheet

SEMiX603GB12E4p PDF Datasheet