SEMiX303GB12E4sSEMIKRON - IGBT Module

SEMiX303GB12E4s Description

SEMiX303GB12E4s is a 1200 V, 300 A Semikron half-bridge IGBT module with 4th generation Trench IGBT and CAL4 diodes, used in AC inverter drives, UPS, renewable energy systems and industrial power converters.

USComponent supplies SEMiX303GB12E4s and other Semikron power modules. Download the datasheet or request a quote for pricing and availability.

Target Applications

SEMIKRON SEMiX303GB12E4s is used for AC inverter drives, UPS, and electronic welding.

Key Specifications

Manufacturer	Semikron
Configuration	Half-bridge (GB) IGBT module with free-wheeling diodes
Package	SEMiX 3s (spring contacts)
Technology	Trench IGBT4
VCES	1200 V
IC	300 A nom.; 466 A (TC = 25 °C) / 359 A (TC = 80 °C)
ICRM	900 A (3 x ICnom)
VCE(sat) typ. / max. (chip level, 25 °C)	1.8 / 2.05 V
Isolation voltage	4000 V (AC, 50 Hz, 1 min)
Mounting torque	M5: 3 - 5 Nm
Terminal torque	M6: 2.5 - 5 Nm
Weight	300 g
Junction temperature	-40 to +175 °C

Download SEMiX303GB12E4s Datasheet

SEMiX303GB12E4s PDF Datasheet